MUBW75-06A8 IXYS, MUBW75-06A8 Datasheet - Page 2
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MUBW75-06A8
Manufacturer Part Number
MUBW75-06A8
Description
MODULE IGBT CBI E3
Manufacturer
IXYS
Datasheet
1.MUBW75-06A8.pdf
(4 pages)
Specifications of MUBW75-06A8
Igbt Type
NPT
Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
1.4mA
Input Capacitance (cies) @ Vce
4.2nF @ 25V
Power - Max
320W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E3
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
140
Rthjc, Typ, Rect 1/3 Ph., (k/w)
0.94
Vces, Inv 3 - Ph., (v)
600
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
100
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
65
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2
Rthjc, Typ, Inv 3 - Ph., (k/w)
0.39
Vces, Br Chopper, (v)
600
Ic80, Tc = 80°c, Br Chopper, (a)
35
Rthjc, Typ, Br Chopper, (k/w)
0.75
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUBW75-06A8
Manufacturer:
LUCENT
Quantity:
452
Part Number:
MUBW75-06A8
Quantity:
60
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
tot
CE(sat)
GE(th)
on
off
F
ies
thJC
thJC
Gon
Conditions
T
Continuous
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
GE
CE
CE
CE
CE
CE
R
= 75 A; V
= 1.5 mA; V
= 60 A; di
= 75 A; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
Inductive load, T
V
V
= 300 V; V
= 300V; V
= 25°C to 150°C
= V
= V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= ± 15 V; R
; V
; V
GE
GE
F
GE
GE
GE
/dt = -500 A/µs; T
GE
GE
GE
GE
= 0 V; T
= 15 V; T
= ± 20 V
G
= 0 V; T
= ± 15 V; R
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= 15 Ω; T
= V
C
G
= 75 A
= 15 Ω
VJ
CE
T
T
T
VJ
VJ
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 25°C
= 125°C
= 125°C
G
= 100 A
VJ
= 15 Ω; T
= 125°C
(T
VJ
VJ
= 125°C
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
I
Characteristic Values
Characteristic Values
CM
V
CEK
Maximum Ratings
=
Maximum Ratings
150
450
260
100
typ.
typ.
≤ V
2.0
2.3
1.5
4.0
3.3
4.2
1.7
1.2
60
40
28
± 20
600
100
150
320
140
CES
65
10
85
max.
max.
0.39 K/W
0.61 K/W
200
2.5
6.5
1.4 mA
2.0
mA
µs
mJ
mJ
W
nC
nA
nF
ns
ns
ns
ns
ns
V
V
A
A
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Thermal Response
IGBT (typ.)
T1-T6
T7
Diode (typ.)
D1-D6
D7
D11-D16
C
C
C
C
C
C
C
C
C
C
th1
th2
th1
th2
th1
th2
th1
th2
MUBW 75-06 A8
th1
th2
= 0.177 J/K; R
= 1.228 J/K; R
= 0.088 J/K; R
= 0.799 J/K; R
= 0.038 J/K; R
= 0.439 J/K; R
= 0.086 J/K; R
= 0.621 J/K; R
V
V
= 0.138 J/K; R
= 0.957 J/K; R
V
V
V
0
0
0
0
0
= 1.21 V; R
= 1.06 V; R
= 1.1 V; R
= 0.85 V; R
= 1.1 V; R
GE
J
= 125°C)
= 15 V; T
0
th1
th2
th1
th2
th1
th2
th1
th2
0
0
0
th1
th2
0
= 12 m Ω
= 15 m Ω
= 36 m Ω
= 2 m Ω
= 5 m Ω
= 0.293 K/W
= 0.097 K/W
= 0.583 K/W
= 0.167 K/W
= 1.725 K/W
= 0.375 K/W
= 0.738 K/W
= 0.202 K/W
= 0.48 K/W
= 0.13 K/W
J
= 125°C)
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