MDI300-12A4 IXYS, MDI300-12A4 Datasheet - Page 4

• Manufacturer Part Number: MDI300-12A4
• Description: MOD IGBT BUCK 1200V 330A Y3-DCB
• Manufacturer: IXYS

Specifications of MDI300-12A4

• Configuration: Single
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 330A
• Current - Collector Cutoff (max): 13mA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1380W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 330
• Ic80, Tc = 80°c, Igbt, (a): 220
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 29
• Rthjc, Max, Igbt, (k/w): 0.09
• If25, Tc = 25°c, Diode, (a): 450
• If80, Tc = 80°c, Diode, (a): 280
• Rthjc, Max, Diode, (k/w): 0.15
• Package Style: Y3-DCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
E
E
I
CM
on
on
100
500
400
300
200
100
mJ
mJ
A
80
60
40
20
80
60
40
20
0
0
0
0
0
0
Fig. 7
Fig. 9
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 200A
= 600V
= ±15V
200
4
100
Typ. turn on energy and switching
Typ. turn on energy and switching
times versus gate resistor
RBSOA
400
8
R
T
V
200
J
G
CEK
= 125°C
600
= 3.3Ω
12
< V
CES
800 1000 1200
16
300
R
I
G
C
20
V
V
R
T
400
V
CE
GE
J
G
CE
t
= 3.3Ω
= 125°C
t
d(on)
E
= 600V
r
= ±15V
24
on
A
t
t
E
d(on)
Ω
r
on
V
500
28
160
120
80
40
0
400
320
240
160
80
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
mJ
mJ
0.1
0.00001 0.0001
80
60
40
20
50
40
30
20
10
0
0
1
MII 300-12A4
0
0
Fig. 8
Fig.10
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 200A
= 600V
= ±15V
4
100
single pulse
Typ. turn off energy and switching
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
8
0.001
200
12
diode
16
300
0.01
R
MID 300-12A4
MDI 300-12A4
G
IGBT
I
20
C
t
t
E
d(off)
V
V
R
T
off
400
J
CE
GE
0.1
G
= 3.3Ω
= 125°C
t
= 600V
= ±15V
f
24
A
E
t
300-12
s
off
Ω
d(off)
t
f
500
28
1
20090812a
800
600
400
200
0
ns
2000
1600
1200
800
400
0
ns
4 - 4
t
t