MID300-12A4 IXYS, MID300-12A4 Datasheet - Page 4
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MID300-12A4
Manufacturer Part Number
MID300-12A4
Description
MOD IGBT RBSOA 1200V 330A Y3-DCB
Manufacturer
IXYS
Datasheet
1.MDI300-12A4.pdf
(4 pages)
Specifications of MID300-12A4
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
330A
Current - Collector Cutoff (max)
13mA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1380W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y3-DCB
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
330
Ic80, Tc = 80°c, Igbt, (a)
220
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
29
Rthjc, Max, Igbt, (k/w)
0.09
If25, Tc = 25°c, Diode, (a)
450
If80, Tc = 80°c, Diode, (a)
280
Rthjc, Max, Diode, (k/w)
0.15
Package Style
Y3-DCB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
E
E
I
CM
on
on
100
500
400
300
200
100
mJ
mJ
A
80
60
40
20
80
60
40
20
0
0
0
0
0
0
Fig. 7
Fig. 9
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 200A
= 600V
= ±15V
200
4
100
Typ. turn on energy and switching
Typ. turn on energy and switching
times versus gate resistor
RBSOA
400
8
R
T
V
200
J
G
CEK
= 125°C
600
= 3.3Ω
12
< V
CES
800 1000 1200
16
300
R
I
G
C
20
V
V
R
T
400
V
CE
GE
J
G
CE
t
= 3.3Ω
= 125°C
t
d(on)
E
= 600V
r
= ±15V
24
on
A
t
t
E
d(on)
Ω
r
on
V
500
28
160
120
80
40
0
400
320
240
160
80
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
mJ
mJ
0.1
0.00001 0.0001
80
60
40
20
50
40
30
20
10
0
0
1
MII 300-12A4
0
0
Fig. 8
Fig.10
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 200A
= 600V
= ±15V
4
100
single pulse
Typ. turn off energy and switching
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
8
0.001
200
12
diode
16
300
0.01
R
MID 300-12A4
MDI 300-12A4
G
IGBT
I
20
C
t
t
E
d(off)
V
V
R
T
off
400
J
CE
GE
0.1
G
= 3.3Ω
= 125°C
t
= 600V
= ±15V
f
24
A
E
t
300-12
s
off
Ω
d(off)
t
f
500
28
1
20090812a
800
600
400
200
0
ns
2000
1600
1200
800
400
0
ns
4 - 4
t
t