MII200-12A4 IXYS, MII200-12A4 Datasheet - Page 4

• Manufacturer Part Number: MII200-12A4
• Description: MOD IGBT RBSOA 1200V 270A Y3-DCB
• Manufacturer: IXYS

Specifications of MII200-12A4

• Configuration: Half Bridge
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 150A
• Current - Collector (ic) (max): 270A
• Current - Collector Cutoff (max): 10mA
• Input Capacitance (cies) @ Vce: 11nF @ 25V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 270A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 270
• Ic80, Tc = 80°c, Igbt, (a): 180
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 21
• Rthjc, Max, Igbt, (k/w): 0.11
• If25, Tc = 25°c, Diode, (a): 300
• If80, Tc = 80°c, Diode, (a): 200
• Rthjc, Max, Diode, (k/w): 0.23
• Package Style: Y3-DCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
400
300
200
100
mJ
mJ
90
60
30
50
40
30
20
10
A
0
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 150A
= 600V
200
= ±15V
4
times versus collector current
times versus gate resistor
RBSOA
100
400
8
600
12
R
T
V
J
CEK
G
= 125°C
= 6.8
< V
200
800 1000 1200
16
W
CES
R
I
G
C
20
t
V
V
R
T
r
V
t
d(on)
CE
GE
J
E
G
CE
on
= 6.8
= 125°C
300
= 600V
24
= ±15V
t
E
W
A
W
d(on)
t
r
V
on
28
120
80
40
0
200
160
120
80
40
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
mJ
mJ
0.1
0.00001 0.0001
80
60
40
20
50
40
30
20
10
0
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
MII 200-12 A4
V
V
I
T
C
J
CE
GE
= 125°C
= 150A
= 600V
= ±15V
4
single pulse
times versus collector current
times versus gate resistor
100
8
0.001
diode
12
200
16
0.01
MID 200-12 A4
MDI 200-12 A4
R
IGBT
G
I
20
C
t
V
V
R
T
0.1
J
CE
GE
G
300
= 6.8
= 125°C
= 600V
24
= ±15V
t
t
E
d(off)
E
f
t
d(off)
off
A
200-12
s
W
off
W
t
f
28
1
800
600
400
200
0
ns
2000
1600
1200
800
400
0
ns
4 - 4
t
t