MUBW75-12T8 IXYS, MUBW75-12T8 Datasheet - Page 6

• Manufacturer Part Number: MUBW75-12T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW75-12T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 5.35nF @ 25V
• Power - Max: 355W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 180
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.80
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 110
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 75
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Output Inverter T1 - T6 / D1 - D6
C
C
E
150
125
100
150
125
100
75
50
25
75
50
25
20
15
10
0
0
5
0
0.0
4
0
Fig. 3 Typical output characteristic
Fig. 5 Typical transfer characteristic
Fig. 7 Typical switching losses
V
V
V
V
R
T
CE
VJ
GE
CE
GE
G
= 4.7
= 20 V
= 125°C
= 15 V
0.5
= 600 V
= ±15 V
30
vs. collector current
6
1.0
60
T
VJ
I
T
C
VJ
= 125°C
E
[A]
= 25°C
1.5
on
90
V
V
CE
GE
8
[V]
E
[V]
2.0
120
off
T
VJ
= 25°C
T
E
VJ
rec
2.5
150
= 125°C
10
3.0
[mJ]
E
20
16
12
3.5
12
8
4
0
0
Fig. 8
V
V
I
T
C
VJ
CE
GE
= 125°C
= 600 V
= ±15 V
= 75 A
10
Typ. switching losses
vs. gate resistance
20
R
G
[ ]
30
[A]
40
I
[A]
F
I
E
C
on
E rec
150
125
100
150
125
100
75
50
25
E off
75
50
25
0
0
50
0.0
0
Fig. 4 Typical output characteristic
Fig. 6 Typical forward characteristic
T
VJ
[K/W]
Z
= 125°C
0.4
thJC
0.01
of free wheeling diode
1
V
0.1
GE
0.001
T
1
VJ
= 13 V
Fig. 9 Transient thermal
0.8
15 V
17 V
19 V
= 125°C
MUBW 75-12 T8
2
0.01
V
1.2
V
single pulse
impedance
CE
F
[V]
[V]
t [s]
1.6
3
0.1
T
VJ
= 25°C
2.0
4
MUBW 75-12T8
1
diode
IGBT
2.4
11 V
9 V
6 - 7
10
5