MUBW75-17T8 IXYS, MUBW75-17T8 Datasheet - Page 5

• Manufacturer Part Number: MUBW75-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW75-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 75A
• Current - Collector (ic) (max): 113A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 450W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 155
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.95
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 113
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 80
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.28
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
[K/W]
Input Rectifier Bridge D11 - D16
Z
[A]
P
[W]
I
thJC
F
tot
400
350
300
250
200
150
100
140
120
100
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
0
0
0.0
1
0
Fig. 4 Power dissipation vs. direct output current & amb. temperature, sin 180°
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Typ. forward current vs.
20
0.5
voltage drop per diode
40
1.0
V
60
F
[V]
I
10
1.5
d(AV)M
T
T
80 100 120 140 160
VJ
VJ
= 125°C
= 25°C
2.0
[A]
2.5
t [ms]
I
100
[A]
FSM
0
700
600
500
400
300
200
100
0
0.01
20
Fig. 2 Surge overload current
40
60
T
50Hz, 80% V
amb
1000
80 100 120 140 160
t [s]
[°C]
0.1
T
VJ
T
VJ
= 150°C
RRM
R
5.0 K/W
2.5 K/W
1.5 K/W
1.0 K/W
0.75 K/W
0.5 K/W
= 45°C
thA
:
10000
1
I
d(AV)
[A]
[A
I
2
2
t
s]
160
140
120
100
10
10
80
60
40
20
0
4
3
0
1
Fig. 5 Max. forward current vs.
Fig. 3 I
T
T
1
2
3
4
5
VJ
MUBW 75-17 T8
VJ
T
20 40 60 80 100 120 140 160
= 45°C
P
= 150°C
J
V
0.049
0.012
0.465
0.105
0.32
case temperature
2
R
2
t versus time per diode
i
C
t [ms]
3
th1
T
R
C
th1
0.0085
0.0017
0.045
0.85
0.33
4 5 6 7 8 9
[°C]
t
i
C
th2
R
20090826a
th2
10
5 - 8
T
C