MWI451-17E9 IXYS, MWI451-17E9 Datasheet

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MWI451-17E9

Manufacturer Part Number
MWI451-17E9
Description
IGBT E9PACK
Manufacturer
IXYS
Datasheet
1.MWI451-17E9.pdf (4 pages)

Specifications of MWI451-17E9

Ntc Thermistor
No
Mounting Type
Chassis Mount
Vces, (v)
1700
Ic25, Tc = 25°c, Igbt, (a)
580
Ic80, Tc = 80°c, Igbt, (a)
405
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.25
Eoff, Typ, Tj = 125°c, Igbt, (mj)
90
Rthjc, Max, Igbt, (k/w)
0.057
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
450
Package Style
E+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package / Case
-
Power - Max
-
Configuration
-
Current - Collector (ic) (max)
-
Voltage - Collector Emitter Breakdown (max)
-
Current - Collector Cutoff (max)
-
Input
-
Igbt Type
-
Vce(on) (max) @ Vge, Ic
-
Input Capacitance (cies) @ Vce
-
IGBT Modules
Sixpack
Preliminary data
Symbol
V
V
I
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C60
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
T
R
Clamped inductive load; L = 100 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
C
C
VJ
C
C
C
VJ
C
CE
CE
CE
CE
GE
CE
CE
G
= 30 mA; V
= 450 A; V
= 25°C
= 60°C
= 80°C
= 25°C
= 3.3 Ω; T
= 25°C to 125°C
= 125°C; non-repetitive; V
= 1200 V; V
= V
= 900 V; V
= 0 V; V
= 900 V; I
= ± 15 V; R
= 25 V; V
CES
; V
GE
GE
GE
GE
VJ
GE
C
GE
= ± 20 V
= 0 V; T
G
= 15 V; T
= 450 A
= 125°C
GE
= V
= 0 V; f = 1 MHz
= 3.3 Ω
VJ
= 15 V; I
= ± 15 V; R
= 125°C
CE
T
VJ
VJ
T
VJ
VJ
= 125°C
= 25°C
C
= 25°C
= 125°C
29
= 300 A
28
G
CEmax
(T
= 3.3 Ω;
VJ
15
16
17
13
14
= 25°C, unless otherwise specified)
< V
CES
2
1
11/12
min.
21
18
20
22
19
Characteristic Values
5
I
V
CM
CEK
Maximum Ratings
=
2.25
2.65
100
470
400
typ.
4
≤ V
2.6
3
90
90
90
33
1700
9/10
± 20
9
580
475
405
750
2.2
CES
10
26
27
23
25
24
0.057 K/W
max.
2.65
3.0
1.5 µA
26 mA
7
1 mA
kW
6
5
µs
mJ
mJ
µC
nF
7/8
ns
ns
ns
ns
V
V
A
A
A
A
V
V
V
Recommended replacement:
MWI 450-17T9
I
V
V
See outline drawing for pin arrangement
Features
-
-
-
-
-
-
-
-
-
-
Advantages
-
-
-
Typical Applications
-
-
-
C60
NPT
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient
for easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ
3
IGBT technology
MWI 451-17 E9
= 475 A
= 1700 V
= 2.25 V
20070912a
E72873
1 - 4

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MWI451-17E9 Summary of contents

Page 1

... 3.3 Ω ± off MHz ies 900 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 11/12 9/ Maximum Ratings 1700 ± 20 580 ...

Page 2

... Strike distance in air A R with heatsink compound thCH Weight * ) · I resp term-chip C CE(sat) IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 450 900 = 0 V 35000 R Characteristic Values min. typ. = 25°C VJ 400 0.075 Characteristic Values min ...

Page 3

... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved = tolerance for all dimensions: MWI 451-17 E9 20070912a ...

Page 4

... A 600 25°C J 400 200 Fig. 1 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 125° MWI 451-17 E9 800 125° 600 400 200 Fig. 2 Typ. output characteristics 13V 20070912a ...

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