MIO1800-17E10 IXYS, MIO1800-17E10 Datasheet - Page 4

• Manufacturer Part Number: MIO1800-17E10
• Description: MOD IGBT SGL SWITCH 1700V E10
• Manufacturer: IXYS

Specifications of MIO1800-17E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 1800A
• Current - Collector (ic) (max): 1800A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 166nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1700
• Ic25, Tc = 25°c, Igbt, (a): 2500
• Ic80, Tc = 80°c, Igbt, (a): 1800
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.3
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 670
• Rthjc, Max, Igbt, (k/w): 0.009
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1800
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2011 IXYS All rights reserved
Fig. 7 Typical switching energies per pulse
Fig. 9 Typical switching timesvs collector current
Fig. 11 Turn-off safe operating area (RBSOA)
2.5
1.5
0.5
2
1
0
2.0
1.5
1.0
0.5
0.0
0.1
10
1
0
0
V
0
CC
V
R
V
T
L
vs collector current
V
R
V
T
L
σ
vj
CC
G
GE
σ
vj
≤ 1300 V
CC
G
GE
= 60 nH
= 125 °C
= 0.82 ohm
t
= 60 nH
= 125 °C
Chip
Module
f
= 900 V
= ±15 V
= 0.82 ohm
t
r
= 900 V
= ±15 V
500
1000
t
1000
d(on)
t
d(off)
E
off
V
1000
CE
2000
I
2000
I
C
C
[A]
[A]
[V]
E
on
3000
3000
1500
4000
4000
2000
Fig. 8 Typical switching energies per pulse
Fig. 10 Typical switching timesvs gate resistor
Fig. 12 Typical diode forward characteristics,
2.5
1.5
0.5
0.1
3600
3200
2800
2400
2000
1600
1200
10
800
400
2
1
0
1
0
0
0
V
I
V
T
L
0
C
V
I
V
T
L
vs gate resistor
σ
C
CC
GE
vj
vj
σ
CC
GE
= 1800 A
= 60 nH
= 1800 A
= 125 °C
= 60 nH
= 125 °C
chip level
= 900 V
= ±15 V
= 900 V
= ±15 V
0.5
t
d(on)
2
2
1
R
Rg [ohm]
G
V
MIO 1800-17E10
[ohm]
t
4
d(off)
F
4
E
[V]
on
1.5
25°C
E
off
6
6
2
125°C
t
t
f
r
2.5
8
8
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