GA300TD60U Vishay, GA300TD60U Datasheet

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GA300TD60U

Manufacturer Part Number
GA300TD60U
Description
IGBT FAST 600V 300A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA300TD60U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 300A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
27.755nF @ 30V
Power - Max
880W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA300TD60U
Quantity:
55
Absolute Maximum Ratings
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Features
Benefits
Thermal / Mechanical Characteristics
V
I
I
I
I
V
V
P
P
T
T
R
R
R
www.irf.com
SMPS, Welding
C
CM
LM
FM
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
recovery
CES
GE
ISOL
D
D
J
STG
@ T
JC
JC
CS
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Parameter
Parameter
S
S
GA300TD60U
-40 to +150
-40 to +125
Ultra-Fast
Max.
2500
600
300
600
600
600
±20
880
460
Typ.
400
0.1
@V
V
GE
CE
V
TM
CES
(on) typ.
=
Speed IGBT
15V
Max.
0.14
0.20
6.0
5.0
=
,
PD -50057E
600
I
= 1.80V
C
=
V
05/14/02
300A
Units
Units
°C/W
N m
°C
W
V
A
V
.
g
1

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GA300TD60U Summary of contents

Page 1

... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA300TD60U Ultra-Fast Max. 600 300 600 600 600 ±20 2500 880 460 ...

Page 2

... GA300TD60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance „ Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...

Page 3

... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 = 15V 10 2.5 3.0 5.0 Fig Typical Transfer Characteristics GA300TD60U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 150 ° 125 C ...

Page 4

... GA300TD60U 400 300 200 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature sista 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 -60 -40 -20 125 150 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature cta lse tio ...

Page 5

... SHORTED 100 0 Fig Typical Gate Charge vs.  1000 R = 100 -60 -40 -20 Fig Typical Switching Losses vs. GA300TD60U = 400V = 187A 200 400 600 800 1000 1200 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 360V  I = 600 300 150 100 120 140 160 ° Junction Temperature ( C ) ...

Page 6

... GA300TD60U  120 R = Ohm 125 C ° 360V CC 100 V = 15V 100 200 300 400 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 T = 125° 25°C J 100 10 1.0 2.0 3.0 4 rwa lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 500 600 ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs. di www.irf.com /dt Fig Typical Recovery Current vs GA300TD60U ° ° /µ / ...

Page 8

... GA300TD60U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...

Page 9

... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 17a's D.U. 480V Figure 19. Pulsed Collector Current GA300TD60U Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... GA300TD60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 [ 4.224 106.30 4.185 [ ] 93.30 3.673 92.70 3.650 [.314] 2X MAX 48.30 [ 1.902 ] 47.70 1.878 ...

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