GA300TD60U Vishay, GA300TD60U Datasheet - Page 3

• Manufacturer Part Number: GA300TD60U
• Description: IGBT FAST 600V 300A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA300TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 27.755nF @ 30V
• Power - Max: 880W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

www.irf.com
1000
100
10
200
160
120
80
40
0.5
0
Fig. 2 - Typical Output Characteristics
0.1

T = 125 C
J
S q u a re w a v e :
V
1.0
CE
°
, Collector-to-Emitter Voltage (V)
60 % of ra ted
Id e a l d io d e s

I
T = 25 C
vo ltag e
J
1.5
°

Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
2.0
GE
= 15V
(Load Current = I
2.5
1
3.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
5.0

T = 125 C
J
V
GE
10
6.0
, Gate-to-Emitter Voltage (V)
°
GA300TD60U
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
J
s ink

= 90°C
T = 25 C
7.0
J

V
80µs PULSE WIDTH
CE
°
= 25V
150
8.0
W
100
3
9.0