GA300TD60U Vishay, GA300TD60U Datasheet - Page 4

• Manufacturer Part Number: GA300TD60U
• Description: IGBT FAST 600V 300A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA300TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 27.755nF @ 30V
• Power - Max: 880W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA300TD60U
Fig. 4 - Maximum Collector Current vs. Case
400
300
200
100
4
0
0 . 0 1
0 . 1
25
0 . 0 0 0 1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.5 0
50
T , Case Temperature ( C)
C
0 .2 0
0 .1 0
0.0 5
0 .0 2
0.0 1
Temperature
0 . 0 0 1
75
100
(Th e r m a l R e sista n c e )
S in g le P u ls e
t , R e cta n g u la r Pu lse D u ra tio n (S e co n ds )
0 . 0 1
1
°
125
150
0 . 1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20

V
80 us PULSE WIDTH
1
GE
vs. Junction Temperature
= 15V
T , Junction Temperature ( C)
Notes:
1. Duty factor D = t / t
2. Peak T = P
J
0
1 0
20
J
40
DM
x Z
60
1
thJC
2
P
80 100 120 140 160
DM
+ T
1 0 0

I =

I =

I =
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C
C
C
C
t
1
600
300
150
t 2
°
A
A
A
1 0 0 0