GA300TD60U Vishay, GA300TD60U Datasheet - Page 6

• Manufacturer Part Number: GA300TD60U
• Description: IGBT FAST 600V 300A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA300TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 27.755nF @ 30V
• Power - Max: 880W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA300TD60U
120
100
1000
6
Fig. 13 - Typical Forward Voltage Drop vs.
100
80
60
40
20
Fig. 11 - Typical Switching Losses vs.
10
0
1.0
0

R
T
V
V
R
CC
GE
F o rwa rd V o lta g e D ro p - V
G
J
G1
Instantaneous Forward Current
Collector-to-Emitter Current
I
=27 ;R
= 125 C
= 360V
= 15V
C
= Ohm
100
, Collector-to-emitter Current (A)
2.0
°
G2
200
= 0
3.0
300
T = 125°C
T = 25°C
4.0
J
J
FM
400
(V )
5.0
500
600
Fig. 14 - Typical Stored Charge vs. di
8 0 0
6 0 0
4 0 0
2 0 0
2 5 0 0 0
2 0 0 0 0
1 5 0 0 0
1 0 0 0 0
5 0 0 0
0
0
V
0
V
T
5 0 0
CE
G E
J
V
Fig. 12 - Reverse Bias SOA
measured at terminal (Peak Voltage)
SAFE OPERATING AREA
CE
= 20V
= 125°C
I = 6 00 A
I = 30 0A
I = 15 0A
F
F
F
, Collector-to-Emitter V oltage (V)
2 0 0
1 0 0 0
d i /dt - (A /µs)
f
4 0 0
V = 36 0 V
T = 12 5 °C
T = 25 °C
R
J
J
1 5 0 0
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6 0 0
f
/dt
2 0 0 0
8 0 0
A