STGE50NB60HD STMicroelectronics, STGE50NB60HD Datasheet

IGBT N-CHAN 600V 50A ISOTOP

STGE50NB60HD

Manufacturer Part Number
STGE50NB60HD
Description
IGBT N-CHAN 600V 50A ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGE50NB60HD

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.5nF @ 25V
Power - Max
300W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-5269-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGE50NB60HD
Manufacturer:
ST
Quantity:
75
Part Number:
STGE50NB60HD
Manufacturer:
PANASONIC
Quantity:
3 000
Part Number:
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Manufacturer:
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0
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequen-cy applications (up to 120kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA
March 2003
STGY50NB60HD
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
HIGH FREQUENCY MOTOR CONTROLS
SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
Symbol
I
V
CM
P
V
T
CES
TOT
I
I
T
stg
GE
C
C
j
TYPE
( )
Collector-Emitter Voltage (V
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
600 V
V
CES
V
C
< 2.8 V
CE(sat)
cesat
Parameter
= 25°C
)
GS
= 0)
50 A
C
C
I
C
= 25°C
= 100°C
N-CHANNEL 50A - 600V - ISOTOP
INTERNAL SCHEMATIC DIAGRAM
STGE50NB60HD
PowerMESH™ IGBT
–65 to 150
ISOTOP
Value
± 20
600
100
400
300
150
2.4
50
W/°C
Unit
°C
°C
W
V
V
A
A
A
1/8

Related parts for STGE50NB60HD

STGE50NB60HD Summary of contents

Page 1

... PULSE WIDTH LIMITED BY SAFE OPERATING AREA March 2003 N-CHANNEL 50A - 600V - ISOTOP V I CE(sat) C < 2 cesat Parameter = 25° 100° 25°C C STGE50NB60HD PowerMESH™ IGBT ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 600 ± 20 100 50 400 300 2.4 –65 to 150 150 Unit W/° ...

Page 2

... STGE50NB60HD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Collectro-Emitter Breakdown BR(CES) Voltage I Collector cut-off CES ( Gate-Emitter Leakage GES Current ( (1) Symbol Parameter ...

Page 3

... Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Test Conditions V = 480 480 125 °C Test Conditions 125 ° 100 =125°C, di/dt = 100A/ s STGE50NB60HD Min. Typ. Max. Unit 166 326 2 270 340 ns 200 3.85 J Min. Typ. Max. Unit 50 A ...

Page 4

... STGE50NB60HD Thermal Impedance Output Characteristics Normalized Gate Threshold Voltage vs Temp. 4/8 Switching Off Safe Operating Area Transfer Characteristics Transconductance ...

Page 5

... Collector-Emitter On Voltage vs Temperature Capacitance Variations Total Switching losses vs Gate Resistance STGE50NB60HD Gate-Charge vs Gate-Emitter Voltage Normalized Break-down Voltage vs Temp. Total Switching losses vs Temperature 5/8 ...

Page 6

... STGE50NB60HD Total Switching losses vs Ic Fig. 1: Gate Charge test Circuit 6/8 Diode Forward Voltage Fig. 2: Test Circuit For Inductive Load Switching ...

Page 7

... STGE50NB60HD MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

Page 8

... STGE50NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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