IXFN24N100 IXYS, IXFN24N100 Datasheet - Page 2
![MOSFET N-CH 1KV 24A SOT-227B](/photos/14/28/142807/to-227b_minibloc_sml.jpg)
IXFN24N100
Manufacturer Part Number
IXFN24N100
Description
MOSFET N-CH 1KV 24A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN24N100.pdf
(4 pages)
Specifications of IXFN24N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
390 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
267nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.39 Ohms
Forward Transconductance Gfs (max / Min)
22 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
595 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.39
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
267
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN24N100
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN24N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN24N100
Quantity:
102
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 24A, -di/dt = 100A/μs
= 24A, V
= 100V
= 1Ω (External)
= 10V, V
= 0V
= 10V, I
= 10V, V
= 0V, V
GS
D
DS
DS
= 0V, Note 1
DS
= 12A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 12A
= 12A
5,049,961
5,063,307
5,187,117
(T
JM
J
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
15
Characteristic Values
Characteristic Values
8700
Typ.
0.05
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
785
315
267
142
1.0
8.0
27
35
35
75
21
52
0.22
Max.
250
1.5
Max.
24
96
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN24N100
7,005,734 B2
7,063,975 B2
7,157,338B2