IXFN48N55 IXYS, IXFN48N55 Datasheet
IXFN48N55
Manufacturer Part Number
IXFN48N55
Description
MOSFET N-CH 550V 48A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN48N55.pdf
(2 pages)
Specifications of IXFN48N55
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
8900pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
8900
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
stg
DSS
DGR
GSM
AR
AS
D
J
J
GS
ISOL
d
DSS
GH(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt £ 100 A/ms, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
G
= 0.5 • I
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MW
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
rr
J
DSS
= 25°C, unless otherwise specified)
JM
Advanced Technical Information
,
IXFN 48N55
min.
550
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
550
550
±20
±30
192
600
150
48
44
60
30
3
5
-
max.
±100
100
110
4.5
2
D
S
V/ns
mJ
mW
V~
V~
mA
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
V
V
J
g
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
£ 250 ns
E153432
DS (on)
HDMOS
=
=
=
G
D = Drain
550
S
TM
110 mW
48
process
98711 (03/24/00)
D
S
V
A
1 - 2
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IXFN48N55 Summary of contents
Page 1
... V DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFN 48N55 Maximum Ratings 550 = 1 MW 550 GS ±20 ±30 48 ...
Page 2
... D D25 65 0.21 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V R 1.4 8 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 48N55 miniBLOC, SOT-227 screws (4x) supplied ns Dim. ...