IXTN17N120L IXYS, IXTN17N120L Datasheet

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IXTN17N120L

Manufacturer Part Number
IXTN17N120L
Description
MOSFET N-CH 1200V 15A SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXTN17N120L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 8.5A, 20V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 15V
Input Capacitance (ciss) @ Vds
8300pF @ 25V
Power - Max
540W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.99 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.9
Ciss, Typ, (pf)
8300
Qg, Typ, (nc)
155
Trr, Typ, (ns)
1830
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN17N120L
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
IXTN17N120L
Quantity:
144
Linear
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
Power MOSFET
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 20V, I
GS
DSS
, I
D
, V
D
D
= 1mA
= 250μA
GS
= 8.5A, Note 1
DS
= 0V
t = 1s
= 0V
GS
= 1MΩ
T
J
= 125°C
JM
IXTN17N120L
1200
-55 to +150
-55 to +150
3.0
Characteristic Values
Min.
Maximum Ratings
1.3/11.5
1.5/13
1200
1200
2500
3000
±30
±40
540
150
2.5
Typ.
8.5
15
34
30
G
S
Max.
±200 nA
Nm/lb.in.
Nm/lb.in.
900 mΩ
6.0
50 μA
2 mA
D
S
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
Designed for Linear Operations
International Standard Package
Molding Epoxies Meet UL94 V-0
Flammability Classification
Guaranteed FBSOA at 60ºC
miniBLOC with Aluminum Nitride
Isolation
Low R
Rugged Polysilicon Gate Cell
Structure
Low Package Inductance
Programmable Loads
Current Regulators
DC-DC Convertors
Battery Chargers
DC Choppers
Temperature and Lighting Controls
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
HDMOS
= 15A
< 900mΩ Ω Ω Ω Ω
= 1200V
D = Drain
S
TM
D
Process
DS99814C(05/10)
S

Related parts for IXTN17N120L

IXTN17N120L Summary of contents

Page 1

... ±30V GSS DSS DS DSS 20V 8.5A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXTN17N120L Maximum Ratings 1200 = 1MΩ 1200 GS ±30 ± 8.5 2.5 540 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. Typ. 1200 3 125° ...

Page 2

... Characteristic Values Min. Typ. = 60° 184 C P Characteristic Values Min. Typ 100V 1830 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN17N120L SOT-227B (IXTN) Outline Max. 6 (M4 screws (4x) supplied 0.23 °C/W °C/W Max. W Max 1 6,404,065 B1 6,683,344 ...

Page 3

... GS 14V 12V 10V 125º 20V GS 14V 12V 10V 8.5A Value vs 125º 25º IXTN17N120L Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature 3 20V GS 2.8 2 2.0 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... V DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40º Volts T = 25ºC J 0.8 0.9 1.0 - Volts C iss C oss C rss 0.001 Volts IXTN17N120L Fig. 8. Transconductance 40ºC, 25ºC, 125º Amperes D Fig. 10. Gate Charge 600V 8.5A ...

Page 5

... V - Volts DS © 2010 IXYS CORPORATION, All Rights Reserved 100 25µs 10 100µs 1ms 1 10ms 100ms DC 0.1 10 1000 10000 IXTN17N120L Fig. 14. Forward-Bias Safe Operating Area @ T = 60º DS(on) Limit T = 150º 60º Single Pulse 100 1000 V - Volts DS 25µs 100µs ...

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