IXFN38N100Q2 IXYS, IXFN38N100Q2 Datasheet

IXFN38N100Q2

Manufacturer Part Number

IXFN38N100Q2

Description

MOSFET N-CH 1000V 38A SOT-227

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFN38N100Q2.pdf (4 pages)

Specifications of IXFN38N100Q2

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

250 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

5V @ 8mA

Gate Charge (qg) @ Vgs

250nC @ 10V

Input Capacitance (ciss) @ Vds

7200pF @ 25V

Power - Max

890W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Configuration

Single Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.25 Ohms

Drain-source Breakdown Voltage

1000 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

38 A

Power Dissipation

890 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

1000

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.25

Ciss, Typ, (pf)

13500

Qg, Typ, (nc)

250

Trr, Typ, (ns)

Trr, Max, (ns)

300

Pd, (w)

890

Rthjc, Max, (ºc/w)

0.14

Package Style

SOT-227B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IXFN38N100Q2

Manufacturer:

IXYS/艾赛斯

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

IXFN38N100Q2

Quantity:

107

Company:

H&T Electronics

Part Number:

IXFN38N100Q2

Quantity:

Current page: 1 of 4
Download datasheet (564Kb)

HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated, Low Q

High dV/dt, Low t

Preliminary Data Sheet

Symbol

dv/dt

Weight

Symbol

D25

GSS

DSS

stg

DGR

GSM

ISOL

DSS

GS(th)

DSS

DS(on)

Test Conditions

Continuous

Transient

50/60 Hz, RMS, t = 1 minute

Mounting torque

Terminal connection torque

Test Conditions

Note 1

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

≤ 150°C, R

= 25°C

= 10 V, I

= ±30 V, V

= V

= 0 V

= 0 V, I

= V

DSS

, di/dt ≤ 100 A/µs, V

, I

= 1mA

= 8mA

= 0.5 • I

= 2 Ω

= 0

, Low Intrinsic R

D25

= 1 MΩ

≤ V

= 25°C, unless otherwise specified)

= 25°C

= 125°C

DSS

IXFN38N100Q2

1000

min.

2.5

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

1000

2500

±30

±40

152

890

150

5.0

max.

±200 nA

0.25 Ω

50 mA

5.0 V

3 mA

V/ns

°C

G = Gate

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

•

Applications

•

Advantages

•

miniBLOC, SOT-227 B (IXFN)

D25

Double metal process for low

miniBLOC, with Aluminium nitride

isolation

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

gate resistance

DC-DC converters

Switched-mode and resonant-mode

power supplies

DC choppers

Pulse generators

Easy to mount

Space savings

High power density

DSS

DS(on)

≤ ≤ ≤ ≤ ≤ 300 ns

E153432

= 1000 V

0.25 Ω Ω Ω Ω Ω

38 A

D = Drain

DS99027A(06/03)

Related parts for IXFN38N100Q2

IXFN38N100Q2 Summary of contents

Page 1

... ± GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXFN38N100Q2 g Maximum Ratings 1000 = 1 MΩ 1000 GS ±30 ±40 38 152 5.0 ≤ DSS 890 -55 ... +150 150 -55 ... +150 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. JM 1.4 9 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFN38N100Q2 miniBLOC, SOT-227 B Outline screws (4x) supplied ns Dim. Millimeter ns Min. Max. ...

Page 3

... Fig. 1. Output Characteristics @ 25 Deg Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs 2 Amperes D © 2003 IXYS All rights reserved 2 2 0.7 0 D25 º º IXFB38N100Q2 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I ...

Page 4

... 0 0 0.1 2 0.1 0.08 0.06 0.04 0. 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFN38N100Q2 Fig. 8. Transconductance º - º º Amperes D Fig. 10. Gate Charge V = 500V 0mA nanoCoulombs G Fig. 12. Maximum Transient Thermal ...

Related keywords

IXFN38N100Q2 datasheet
IXFN38N100Q2 data sheet
IXFN38N100Q2 pdf datasheet
IXFN38N100Q2 component
IXFN38N100Q2 part
IXFN38N100Q2 distributor
IXFN38N100Q2 RoHS
IXFN38N100Q2 datasheet download