IXFE80N50 IXYS, IXFE80N50 Datasheet - Page 2

• Manufacturer Part Number: IXFE80N50
• Description: MOSFET N-CH 500V 72A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE80N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 9890pF @ 25V
• Power - Max: 580W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 72 A
• Power Dissipation: 580 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 72
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 9890
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 560
• Rthjc, Max, (ºc/w): 0.22
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes: 1. Pulse width limited by T
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
G(on)
GS
GD
2. Pulse test, t
3. I
T
Test current: I
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t
I
F
F
GS
DS
= I
= 25A, -di/dt = 100 A/ s, V
= 15 V; I
S
= 0 V
V
V
R
V
, V
GS
GS
GS
G
GS
= 1
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
300 ms, duty cycle d
D
T
= I
= 40 A
300 s, duty cycle d
(External),
T
DS
, Note 2
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
JM.
JM
R
DSS
DSS
(T
(T
= 100 V
J
J
, I
, I
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= I
= I
2%.
T
T
2 %
min.
50
min.
Characteristic Values
Characteristic Values
4,835,592
4,850,072
9890
1750
0.07
typ.
typ.
1.2
460
102
380
173
70
61
70
27
80
8
4,881,106
4,931,844
0.22
max.
max.
320
250
1.3
80
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
5,049,961
5,063,307
ISOPLUS-227 B
5,187,117
5,237,481
IXFE 80N50
5,486,715
5,381,025
6,306,728B1