VMM90-09F IXYS, VMM90-09F Datasheet

VMM90-09F

Manufacturer Part Number

VMM90-09F

Description

MOSFET MOD PHASE LEG 900V Y3-LI

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.VMM90-09F.pdf (4 pages)

Specifications of VMM90-09F

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

76 mOhm @ 65A, 10V

Drain To Source Voltage (vdss)

900V

Current - Continuous Drain (id) @ 25° C

85A

Vgs(th) (max) @ Id

5V @ 30mA

Gate Charge (qg) @ Vgs

960nC @ 10V

Mounting Type

Chassis Mount

Package / Case

Y3-Li

Vdss, Max, (v)

900

Id25, Tc = 25°c, (a)

Rds(on), Max, Tj = 25°c, (ohms)

Ciss, Typ, (pf)

Qg, Typ, (nc)

960

Tf, Typ, (ns)

140

Tr, Typ, (ns)

180

Pd, (w)

Rthjc, Max, (c/w)

0.08

Package Style

Y3-Li (low inductance)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VMM90-09F

Manufacturer:

IXYS

Quantity:

120

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VMM90-09F

Manufacturer:

Quantity:

5 600

Current page: 1 of 4
Download datasheet (126Kb)

Dual Power

HiPerFET

Phaseleg Configuration

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFET T1 + T2

D25

D80

F25

F80

DSS

GSS

d(on)

d(off)

DSS

GSth

DSon

thJC

thJS

Conditions

(diode) T

Conditions

(diode) I

with heat transfer paste

= 25°C

= 80°C

= 25°C to 150°C

= 10 V; I

= 20 V; I

= 0.8 • V

= ±20 V; V

= I

= 10 V; V

D80

= 90 A; V

= 90 A; -di/dt = 400 A/µs; V

= 25°C

= 80°C

; R

Module

DSS

= 30 mA

= I

; V

= 0.47 Ω

D80

= 0 V

= 450 V; I

= 0.5 • V

= 0 V; T

= 0 V

DSS

= 50 A

;

= 25°C

= 125°C

= 25°C, unless otherwise specified)

= 100 V

min.

Characteristic Values

Maximum Ratings

0.12

960

225

430

150

180

330

140

250

typ.

1.5

1.1

900

±20

max.

0.08 K/W

NTC

0.4 mA

1.6

76 mΩ

K/W

µA

Features

• HiPerFET

• thermistor

• package

Applications

• converters with high power density

D25

DSS

– low R

– unclamped inductive switching (UIS)

– dv/dt ruggedness

– fast intrinsic reverse diode

– low gate charge

for internal temperature measurement

– low inductive current path

– screw connection to high current

– use of non interchangeable

– Kelvin source terminals for easy drive

– isolated DCB ceramic base plate

and high switching speed for

– power supplies

– induction heating

DS(on)

capability

main terminals

connectors for auxiliary terminals

possible

DSon

= 900 V

= 85 A

= 76 mΩ Ω Ω Ω Ω

VMM 90-09F

technology

1 - 4

Related parts for VMM90-09F

VMM90-09F Summary of contents

Page 1

... V (diode (diode -di/dt = 400 A/µ thJC R with heat transfer paste thJS IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved NTC Maximum Ratings 900 ± Characteristic Values (T = 25°C, unless otherwise specified) VJ min. ...

Page 2

... Type ZY180R with wire length 350mm – for pins 7 (yellow wire) and 6 (red wire) – for pins 8 (yellow wire) and 9 (red wire) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Characteristic Values min ...

Page 3

... Fig. 3 Typical output characteristics 2 2 125° DS(on) norm. 1.6 1 25° 120 I D Fig. 5 Typical normalized R IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved V = 9/8/7 norm. 160 200 A versus I DSon D VMM 90-09F ...

Page 4

... V SD Fig. 9 Typical forward characteristics of diode 0.100 K/W 0.010 R thJC 0.001 0.001 0.01 Fig. 11 Transient thermal resistance IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 100000 10000 C 1000 1200 25°C J 0.8 1.0 V ...

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