VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 2

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

VSK.F200..P Series
Vishay Semiconductors
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive on-state,
surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
2
2
t for fusing
t for fusing
r
d
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
SYMBOL
380
460
310
250
180
50
50
85
V
V
I
T(RMS)
(MAGN-A-PAK Power Modules), 200 A
I
I
T(TO)1
T(TO)2
V
T(AV)
I
TSM
I
2
r
r
180° el
I
I
2
TM
80 % V
t1
t2
t
H
L
t
10/0.47
DRM
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
T
(I >  x I
(16.7 % x  x I
T
(I >  x I
I
T
T
pk
J
J
J
J
560
690
450
360
280
= T
= T
= 25 °C, I
= 25 °C, V
= 600 A, T
50
50
60
I
TM
J
J
maximum
maximum
T(AV)
T(AV)
T
< I <  x I
< I <  x I
A
J
> 30 A
T(AV)
T(AV)
= 12 V, Ra = 6 , I
= T
TEST CONDITIONS
630
710
530
410
300
50
85
J
-
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
< I <  x I
< I <  x I
maximum, t
80 % V
180° el
T(AV)
T(AV)
10/0.47
), T
), T
RRM
RRM
[e-mail]
DRM
T(AV)
T(AV)
J
J
= T
= T
1060
p
850
760
560
410
I
50
60
TM
),
),
-
= 10 ms sine pulse
g
J
J
= 1A
maximum
maximum
Sinusoidal
half wave,
initial T
J
= 125 °C
2460
1570
630
410
50
85
-
-
80 % V
100 µs
10/0.47
DRM
Document Number: 94422
VALUES
7600
8000
6400
6700
2900
1000
3180
2080
1.18
1.25
0.74
0.70
1.73
200
444
290
265
205
187
600
860
560
I
50
60
85
TM
-
-
Revision: 19-Jul-10
UNITS
UNITS
kA
/μF
A/μs
kA
m
mA
°C
°C
A
V
A
A
V
V
2
2
s
s