VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 5

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

Document Number: 94422
Revision: 19-Jul-10
10000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Fig. 7 - On-State Voltage Drop Characteristics
7000
6000
5000
4000
3000
8000
7000
6000
5000
4000
3000
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
100
0.01
1
1
VSK.F 200.. S eries
Per Junction
VSK.F200.. S eries
Per Junction
Instantaneous On-state Voltage (V)
Ma ximum Non Rep etitive S urge Current
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
2
Rated V
Versus Pulse T rain Duration. Control
Pulse T rain Duration (s)
3
R RM
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
No Voltage R eap plied
R ated V
Fast Thyristor/Diode and Thyristor/Thyristor
Applied Following S urge.
T = 25°C
T = 125°C
0.1
10
4
J
J
VSK.F200.. Series
Per Junc tion
(MAGN-A-PAK Power Modules), 200 A
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
Initial T = 125°C
R RM
5
R eapplied
J
J
6
100
1
7
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 8 - Thermal Impedance Z
0.001
[e-mail]
0.01
320
300
280
260
240
220
200
180
160
140
120
100
180
150
120
0.1
80
90
60
30
R ate Of Fall Of Forward Current - di/ dt (A/ µs )
0.001
R ate Of Fall Of Forward Current - di/ dt (A/ µs )
1
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
S teady S tate Value:
R
(DC Operation)
thJC
S quare Wave Puls e Duration (s)
0.01
= 0.125 K/ W
I
T M
Vishay Semiconductors
VSK.F200..P Series
I
T M
= 1000 A
0.1
= 1000A
300 A
200 A
100 A
500 A
500A
300A
200A
100A
VSK.F 200.. S eries
Per Junc tion
VSK.F200.. S eries
T = 125°C
VSK.F200.. S eries
T = 125°C
1
J
J
thJC
Characteristics
10
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100
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