VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 7

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

Document Number: 94422
Revision: 19-Jul-10
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tp
VSK.F200.. S eries
S inusoidal pulse
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Pulse Basewidth (µs)
0.05
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For technical questions within your region, please contact one of the following:
0.25
Fast Thyristor/Diode and Thyristor/Thyristor
100
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10
0.5
1
(MAGN-A-PAK Power Modules), 200 A
0.01
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Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
VGD
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
2.5
<=30% rated di/ dt : 10V, 20ohms
rated di/ dt : 10V, 10ohms
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IGD
10 joules per pulse
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Fig. 15 - Gate Characteristics
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(b)
Instantaneous Gate Current (A)
VSK.F200.. Series
(a)
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Frequenc y Limited by PG(AV)
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(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
tp
(1)
10
VSK.F200.. S eries
T rapezoidal pulse
d i/ dt 50A/ µs
0.05
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(2)
0.1
Pulse Basewidth (µs)
Vishay Semiconductors
VSK.F200..P Series
0.25
(3)
0.5
(4)
1
100
2.5
5
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10 joules per pulse
www.vishay.com
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