VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 6

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

VSK.F200..P Series
Vishay Semiconductors
www.vishay.com
6
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
tp
tp
tp
5000
VSK.F200.. S eries
T rapezoid a l pulse
T = 85°C d i/d t 50A/ µs
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 50A/ µs
5000
C
C
5000
VSK.F200.. S eries
S inusoidal pulse
T = 85°C
2500
C
1E 2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
[e-mail], [e-mail],
2500
2500
1000
For technical questions within your region, please contact one of the following:
1000
1000
400
400
400
150
1E3
1E 3
Fast Thyristor/Diode and Thyristor/Thyristor
1E3
150
150
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
(MAGN-A-PAK Power Modules), 200 A
s
s
D
s
s
D
s
s
D
50 Hz
50 Hz
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
DRM
DRM
DRM
1E 4
1E 4
1E4
1E 4
1E4
1E4
1E1
E1
E1
1E1
1E1
1E1
[e-mail]
tp
tp
tp
VSK.F200.. S eries
S inusoidal pulse
T = 60°C
5000
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 100A/ µs
VSK.F200.. Series
T rapezoidal pulse
T = 85°C di/ dt 100A/ µs
C
C
5000
5000
C
2500
1E2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2500
2500
1000
1000
1000
400
400
400
Document Number: 94422
150
1E3
1E3
150
1E3
150
S nubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
s
s
D
50 Hz
s
s
D
Revision: 19-Jul-10
DRM
DRM
DRM
1E4
1E4
1E4