MMO90-12IO6 IXYS, MMO90-12IO6 Datasheet - Page 2

• Manufacturer Part Number: MMO90-12IO6
• Description: MODULE AC CTLR 1200V SOT-227B
• Manufacturer: IXYS

Specifications of MMO90-12IO6

• Structure: 1-Phase Controller - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 100mA
• Current - On State (it (av)) (max): 41A
• Current - On State (it (rms)) (max): 65A
• Current - Non Rep. Surge 50, 60hz (itsm): 800A, 860A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
V
V
r
V
I
V
I
I
I
t
t
R
R
d
d
a
© 2000 IXYS All rights reserved
D
GT
GD
L
H
gd
q
T
miniBLOC, SOT-227 B
S
A
T
T0
GT
GD
thJC
thCH
M4 screws (4x) supplied
Test Conditions
T
I
For power-loss calculations only
V
V
T
T
I
T
T
I
T
V
per thyristor; DC current
per module
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
T
G
G
VJ
VJ
VJ
VJ
VJ
VJ
D
D
R
= 0.3 A; di
= 0.3 A; di
= 6 V;
= 6 V;
= 100 V; dv/dt = 15 V/µs; V
= T
= 25°C; t
= 25°C; V
= 25°C; V
= T
= T
= 80; T
VJM
VJM
VJM
;
; I
; V
VJ
T
P
R
G
G
= 20 A, t
= 25°C
D
D
/dt = 0.3 A/µs
/dt = 0.3 A/µs
= 10 ms
= V
= 6 V; R
= ½ V
RRM
T
T
T
T
V
VJ
VJ
VJ
VJ
D
; V
=
DRM
= 25°C
= -40°C
= 25°C
= -40°C
P
2
= 200 µs; di/dt = -10 A/µs
GK
D
/
3
= V
V
= ¥
DRM
DRM
D
=
Dim.
2
/
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
3
V
DRM
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
Min.
Millimeter
Characteristic Values
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
£
£
£
£
£
£
£
£
£
£
£
typ.
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Inches
1.43
0.05
100
200
250
100
150
5.8
1.5
1.6
0.2
0.9
0.6
0.3
0.1
20
50
5
2
8
4
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
K/W
K/W
K/W
K/W
m/s
mW
mm
mm
mA
mA
mA
mA
mA
mA
µs
µs
V
V
V
V
V
2
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
t
1000
V
gd
100
G
0.1
10
10
V
s
1
1
10
1
I
GD
1: I
2: I
3: I
, T
GT
GT
GT
VJ
, T
, T
, T
= 125°C
VJ
VJ
VJ
10
typ.
= 125°C
= 25°C
= -40°C
1
100
100
2
Limit
3
MMO 90
4: P
5: P
6: P
I
I
4
G
1000
G
GAV
GM
GM
T
VJ
=
= 10 W
= 0.5 W
= 25°C
mA
5 W
5
2 - 3
mA
1000
6