VVZB135-16NO1 IXYS, VVZB135-16NO1 Datasheet - Page 4

• Manufacturer Part Number: VVZB135-16NO1
• Description: RECT BRIDGE 3PH 135A 1600V E2
• Manufacturer: IXYS

Specifications of VVZB135-16NO1

• Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1600V
• Current - Gate Trigger (igt) (max): 78mA
• Current - On State (it (av)) (max): 135A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 135
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 85
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Non Rep. Surge 50, 60hz (itsm): -
• Current - On State (it (rms)) (max): -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
P
thJC
I
tot
T
250
200
150
100
K/W
150
125
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
75
50
25
W
A
0.001
0
0
0.0
0
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 3 Forward current versus
30
voltage drop per leg
0.5
T
VJ
=125°C
60
1.0
0.01
T
VJ
90
= 25°C
I
V
RMS
T
1.5
120
V
A
2.0
0
0.5
I
1
1.5
0.1
TSM
2
3
5
600
500
400
300
200
100
R
A
25
0.001
0
thKA
Fig. 4 Surge overload current
K/W =
50
0.01
75
0.2
1
t
T
100
A
t
0.1
T
T
50 Hz
80 % V
VJ
VJ
s
125
= 45°C
=150°C
s
VVZB 135
RRM
150
10
1
I
TAVM
10000
I
2
1000
t
100
150
120
A
90
60
30
A
2
0
s
1
0
Fig. 7 Maximum forward current
Fig. 5 I²t versus time
V
R
R
25
= 0 V
thi
0.083
0.361
0.176
Constants for Z
0.03
/ (K/W)
T
at case temperature
(per thyristor/diode)
VJ
50
=45°C
75
VVZB 135
100 125 150
thJC
T
T
C
VJ
t
0.0005
0.008
0.094
calculation:
t
0.45
i
=150°C
/ (s)
20070912a
ms
4 - 5
10