MCD224-20IO1 IXYS, MCD224-20IO1 Datasheet - Page 2
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MCD224-20IO1
Manufacturer Part Number
MCD224-20IO1
Description
MOD THYRISTOR/DIODE 2000V Y1-CU
Manufacturer
IXYS
Datasheet
1.MCD224-20IO1.pdf
(4 pages)
Specifications of MCD224-20IO1
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
2000V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
240A
Current - On State (it (rms)) (max)
400A
Current - Non Rep. Surge 50, 60hz (itsm)
8000A, 8500A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
Y1-CU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCD224-20IO1
Manufacturer:
CML
Quantity:
1 982
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
Type ZY 180R
Dimensions in mm (1 mm = 0.0394“)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
I
R
R
d
d
a
RRM
GT
GD
L
H
RM
gd
q
t
GT
GD
S
A
T
T0
thJC
thJK
S
, I
DRM
Conditions
V
I
For power-loss calculations only
V
V
V
t
I
V
V
I
V
dv/dt = 50 V/µs; -di/dt = 10 A/µs
I
I
per thyristor; DC current
per module
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
T
p
G
G
T
T
R
D
D
D
D
D
D
= 30 µs; V
= 600 A
= 300 A; V
= 300 A; -di/dt = 50 A/µs
= 0.45 A; di
= 1 A; di
/ V
= 6 V
= 6 V
=
= 6 V; R
= ½V
=
2
2
(L = Left for pin pair 4/5)
(R = right for pin pair 6/7)
D
/
/
3
3
= V
V
V
DRM
DRM
DRM
RRM
G
GK
D
/dt = 1 A/µs
;
R
= 6 V
= ∞;
/ V
G
= 100 V; t
/dt = 0.45 A/µs
DRM
p
= 200 µs
UL 758, style 1385,
CSA class 5851, guide 460-1-1
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= T
= 25°C
= T
= 25°C
= -40°C
= 25°C
= -40°C
= T
= 25°C
= 25°C
= 25°C
= T
= T
VJM
VJM
VJM
VJM
VJM
Characteristic Values
200
typ.
0.139
0.069
0.179
0.089
max.
12.7
0.76
0.25
150
220
200
150
760
275
1.4
0.8
9.6
40
10
50
2
3
2
m/s
K/W
K/W
K/W
K/W
mm
mm
mW
mA
mA
mA
mA
mA
mA
µC
µs
µs
V
V
V
V
V
A
2
I
[A]
T / F
[µs]
t
[V]
V
gd
G
800
600
400
200
100
0.1
0.1
10
10
0
1
1
10
0.0
0.01
10
Fig. 2 Gate trigger characteristics
Fig. 3 Gate trigger delay time
Fig. 1 Forward characteristics
-3
I
1: I
2: I
3: I
GD
, T
GT
GT
GT
T
10
0.4
, T
, T
, T
VJ
VJ
-2
= 130°C
VJ
VJ
VJ
typ.
= 125°C
= 130°C
= 25°C
= -40°C
1
100
0.1
2
10
0.8
V
I
-1
I
T / F
G
G
T
limit
VJ
[A]
[A]
3
= 25°C
[V]
MCC 224
MCD 224
1.2
10
1000
0
4: P
5: P
6: P
1
GM
GM
GM
T
VJ
1.6
4
10
= 20 W
= 60 W
= 120 W
= 25°C
1
20091008c
5
6
10000
2 - 4
2.0
10
10
2