ESM4045DV STMicroelectronics, ESM4045DV Datasheet
ESM4045DV
Specifications of ESM4045DV
ESM4045DV
Available stocks
Related parts for ESM4045DV
ESM4045DV Summary of contents
Page 1
... CM I Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j September 2003 NPN DARLINGTON POWER MODULE INTERNAL SCHEMATIC DIAGRAM = - ms ms ESM4045DV ISOTOP Value Unit 600 V 450 150 W o -55 to 150 C o 150 C 1/8 ...
Page 2
... ESM4045DV THERMAL DATA R Thermal Resistance Junction-case (transistor) thj-case R Thermal Resistance Junction-case (diode) thj-case R Thermal Resistance Case-heatsink With Conductive thc-h Grease Applied ELECTRICAL CHARACTERISTICS (T Symbol Parameter I # Collector Cut-off CER Current ( Collector Cut-off CEV Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(SUS) Sustaining Voltage ...
Page 3
... Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM4045DV 3/8 ...
Page 4
... ESM4045DV Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load 4/8 Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ...
Page 5
... Dc Current Gain Peak Reverse Current Versus di Turn-on Switching Waveforms Typical V /dt Turn-on Switching Test Circuit F ESM4045DV Versus 5/8 ...
Page 6
... ESM4045DV Turn-on Switching Test Circuit Turn-off Switching Test Circuit of Diode 6/8 Turn-off Switching Waveforms Turn-off Switching Waveform of Diode ...
Page 7
... ESM4045DV MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 P093A 7/8 ...
Page 8
... ESM4045DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...