GP1S093HCZ0F Sharp Microelectronics, GP1S093HCZ0F Datasheet

SENSOR OPTO SLOT 2MM TRANS THRU

GP1S093HCZ0F

Manufacturer Part Number
GP1S093HCZ0F
Description
SENSOR OPTO SLOT 2MM TRANS THRU
Manufacturer
Sharp Microelectronics
Type
Unamplifiedr
Datasheet

Specifications of GP1S093HCZ0F

Sensing Distance
0.079" (2mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
50µs, 50µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Output Collector Emitter Voltage (detector)
35 V
Maximum Reverse Voltage (emitter)
6 V
Maximum Collector Current (detector)
20 mA
Slot Width
2 mm
Aperture Width
0.3 mm
Output Device
Phototransistor
Power Dissipation
100 mW
Maximum Fall Time
150000 ns
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
150000 ns
Minimum Operating Temperature
- 25 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-1963-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GP1S093HCZ0F
Manufacturer:
Sharp Microelectronics
Quantity:
1 982
Part Number:
GP1S093HCZ0F
Manufacturer:
Panasonic
Quantity:
2 740
Part Number:
GP1S093HCZ0F
0
GP1S093HCZ0F
■ Description
transistor output, transmissive photointerrupter, with
opposing emitter and detector in a molding that provides
non-contact sensing. The compact package series is
a result of unique technology combing transfer and
injection molding.
■ Features
1. Transmissive with phototransistor output
2. Highlights :
3. Key Parameters :
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
GP1S093HCZ0F is a compact-package, photo-
The device has a low profi le, and wide gap.
• Compact Size
• Gap Width : 2mm
• Slit Width (detector side): 0.3mm
• Package : 4.5×2.6×2.9mm
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
1
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. General purpose detection of object presence or
2. Example : printer, lens control for camera
Gap : 2mm Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
motion.
Sheet No.: D3-A00401EN
GP1S093HCZ0F
© SHARP Corporation
Date Oct. 3. 2005

Related parts for GP1S093HCZ0F

GP1S093HCZ0F Summary of contents

Page 1

... GP1S093HCZ0F ■ Description GP1S093HCZ0F is a compact-package, photo- transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. The device has a low profi le, and wide gap. ...

Page 2

... This portion does not have any solder plating in some cases. Product mass : approx. 0.05g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan Anode Collector Emitter Cathode (Unit : mm) a-aʼ section (0.3) 2.6 Slit width ∗∗∗ ∗∗∗ ∗∗ 0.4 ∗2 2 GP1S093HCZ0F Sheet No.: D3-A00401EN ...

Page 3

... 20V CEO 5V 5mA 10mA μ A CE(sat 5V 100 μ GP1S093HCZ0F 1mm or more Soldering area (T MIN. TYP. MAX. 1.2 1.4 − 10 − − 100 − − 100 400 − 0.4 − − 50 150 − Ω 150 − Sheet No.: D3-A00401EN = 25˚ Unit V μ μ ...

Page 4

... Fig.4 Collector Current vs. Forward Current 1.1 0.9 25˚C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.1 2.4 2.7 3 (V) Fig.6 Relative Collector Current vs. Ambient Temperature 120 110 100 =50mA =10mA ( GP1S093HCZ0F P tot −25 Ambient temperature T (˚ = =25˚ Forward current I (mA 5mA ...

Page 5

... Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Fig.8 Collector Dark Current vs. Ambient Temperature 10 I =10mA F I =40μ Fig.10 Test Circuit for Response Time R D Input 10 100 (k ) Fig.12 Detecting Position Characteristics (2) 100 I =5mA F V =5V CE L GP1S093HCZ0F 6 V 20V Ambient temperature T (˚ Input Output Output =5mA = ...

Page 6

... V-0) Maximum Sensitivity wavelength (nm) wavelength (nm) 930 Maximum light emitting Material wavelength (nm) Gallium arsenide (GaAs) Lead frame Lead frame plating 42Alloy 6 GP1S093HCZ0F 1.6mm or more Sensitivity Response time (μs) 700 to 1 200 20 I/O Frequency (MHz) 950 0.3 SnCu plating Sheet No.: D3-A00401EN ...

Page 7

... Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 7 GP1S093HCZ0F Sheet No.: D3-A00401EN ...

Page 8

... Package specifi cation ● Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-Elastomer Package method MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. 8 GP1S093HCZ0F Sheet No.: D3-A00401EN ...

Page 9

... SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 9 GP1S093HCZ0F Sheet No.: D3-A00401EN ...

Related keywords