NUS6160MNTWG ON Semiconductor, NUS6160MNTWG Datasheet - Page 11

• Manufacturer Part Number: NUS6160MNTWG
• Description: IC OVP LOW PRO W/MOSFET 22-QFN
• Manufacturer: ON Semiconductor

Specifications of NUS6160MNTWG

• Voltage - Working: 1.2 ~ 20V
• Technology: Mixed Technology
• Number Of Circuits: 1
• Applications: General Purpose
• Package / Case: 22-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Clamping: -

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
100
1000
−V
10
900
800
700
600
500
400
300
200
100
1
GS
0
1
Figure 25. Resistive Switching Time Variation
0
V
I
V
D
−V
DD
GS
= −1.0 A
DS
t
t
d(on)
d(off)
= −10 V
= −4.5 V
2
t
t
f
r
C
R
Figure 23. Capacitance Variation
rss
4
G
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
6
TYPICAL PERFORMANCE CURVES
8
10
0.01
10
100
0.1
10
1
0.1
12
Figure 27. Maximum Rated Forward Biased
V
SINGLE PULSE
T
C
GS
−V
= 25°C
= −8 V
14
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
16
R
THERMAL LIMIT
PACKAGE LIMIT
T
J
DS(on)
Safe Operating Area
= 25°C
http://onsemi.com
C
C
18
1
iss
oss
100
LIMIT
20
11
5
4
3
2
1
0
0
Drain−to−Source Voltage vs. Total Gate Charge
(T
5
4
3
2
1
0
0.4
J
10
Q1
= 25°C unless otherwise noted)
Figure 26. Diode Forward Voltage vs. Current
1
V
T
J
GS
−V
= 25°C
0.5
Figure 24. Gate−to−Source and
SD
= 0 V
100 ms
10 ms
1 ms
10 ms
dc
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
2
g
, TOTAL GATE CHARGE (nC)
0.6
Q2
3
100
0.7
QT
4
0.8
5
0.9
6
I
T
D
1.0
J
= −2.7 A
= 25°C
7
1.1
8
1.2