STPS2150 STMicroelectronics, STPS2150 Datasheet - Page 4
STPS2150
Manufacturer Part Number
STPS2150
Description
DIODE SCHOTTKY 150V 2A DO-15
Manufacturer
STMicroelectronics
Datasheet
1.STPS2150A.pdf
(9 pages)
Specifications of STPS2150
Voltage - Forward (vf) (max) @ If
820mV @ 2A
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1.5µA @ 150V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Schottky Rectifiers
Peak Reverse Voltage
150 V
Forward Continuous Current
2 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.89 V at 4 A
Maximum Reverse Leakage Current
1.5 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3213-3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS2150
Manufacturer:
EPCOS
Quantity:
30 000
Part Number:
STPS2150
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
STPS2150A
Manufacturer:
Stmicro
Quantity:
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Company:
Part Number:
STPS2150A
Manufacturer:
LTC
Quantity:
106
Part Number:
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Manufacturer:
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Quantity:
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Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Reverse leakage current versus
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-03
6
5
4
3
2
1
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
1.E-02
I (A)
M
Z
th(j-a)
Single pulse
0
I (µA)
I
M
SMA
R
/R
th(j-a)
1.E-01
δ
Non repetitive surge peak forward
current versus overload duration
(maximum values, SMAflat)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMA)
reverse voltage applied
(typical values)
=0.5
t
25
1.E-02
1.E+00
50
t(s)
V (V)
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
j
j
j
j
j
j
R
75
1.E+01
1.E-01
t (s)
p
100
1.E+02
125
SMAflat
T
T
T
a
a
a
=25°C
=125°C
=75°C
1.E+03
1.E+00
150
Figure 8.
Figure 10. Relative variation of thermal
Figure 12. Junction capacitance versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.E-02
1.E-01
10
Z
Z
C(pF)
th(j-a)
th(j-a)
1
Single pulse
Single pulse
SMAflat
DO-15
/R
/R
th(j-a)
th(j-a)
1.E-01
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-15)
impedance junction to ambient
versus pulse duration (SMAflat)
reverse voltage applied
(typical values)
1.E+00
10
1.E+00
1.E+01
V (V)
R
1.E+01
t (s)
p
t (s)
p
100
1.E+02
1.E+02
V
OSC
STPS2150
F=1MHz
T =25°C
=30mV
j
RMS
1.E+03
1.E+03
1000