STB5N62K3 STMicroelectronics, STB5N62K3 Datasheet - Page 4
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STB5N62K3
Manufacturer Part Number
STB5N62K3
Description
MOSFET N-CH 620V 4.2A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N62K3.pdf
(19 pages)
Specifications of STB5N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
4.2A
Drain Source Voltage Vds
620V
On Resistance Rds(on)
1.28ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10953-2
Electrical characteristics
2
4/19
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
Table 5.
1. C
C
V
Symbol
Symbol
R
OSS eq
V
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
oss eq
oss
rss
iss
gs
gd
g
g
(1)
. is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 17361 Rev 2
V
V
V
f=1 MHz open drain
V
V
(see Figure 20)
I
V
V
V
V
D
DS
GS
GS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0, V
= 10 V
= ± 20 V; V
= V
= 10 V, I
= 496 V, I
Test conditions
Test conditions
GS
DS
, I
GS
D
D
= 0 to 496 V
D
= 50 µA
= 2.1 A
= 0
DS
= 4.2 A,
=0
C
=125 °C
Min.
Min.
620
3
-
-
-
STB/D/F/P/U5N62K3
Typ.
Typ.
16.6
3.75
1.28
680
50
26
16
8
4
4
oss
when V
Max.
Max.
±10
4.5
1.6
50
1
-
-
-
D
Unit
Unit
S
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω