STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 7

• Manufacturer Part Number: STD65N55LF3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10877-2

STD65N55LF3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
0.75
0.65
0.55
0.85
0.45
0.6
(V)
0.95
1.2
1.0
0.8
0.2
V
0.4
10
GS
SD
6
2
8
4
0
0
-75
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
5
T
10
J
-25
=-55°C
10
20
V
15
25
DD
I
D
=27.5V
=65A
T
30
J
20
=175°C
75
40
25
125
T
50
30
J
=25°C
35
60
175
Doc ID 16371 Rev 2
AM08214v1
AM08216v1
AM08212v1
Q
T
I
J
g
SD
(°C)
(nC)
(A)
Figure 11. Normalized on resistance vs
R
DS(on)
1000
(norm)
(pF)
100
0.8
0.6
1.0
1.8
1.6
2.0
1.4
1.2
C
10
-75
0.1
Capacitance variations
temperature
-25
1
25
Electrical characteristics
V
I
GS
D
=32A
=10V
75
10
125
175
V
DS
AM08215v1
AM08213v1
(V)
T
Crss
Ciss
J
Coss
(°C)
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