STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 9
![MOSFET N-CH 55V 80A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD65N55LF3
Manufacturer Part Number
STD65N55LF3
Description
MOSFET N-CH 55V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD65N55LF3.pdf
(13 pages)
Specifications of STD65N55LF3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10877-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD65N55LF3
Manufacturer:
RFMD
Quantity:
3 107
STD65N55LF3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 16371 Rev 2
Package mechanical data
9/13
®