STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 5
![MOSFET N-CH 650V 7A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD8N65M5
Manufacturer Part Number
STD8N65M5
Description
MOSFET N-CH 650V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STD8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10878-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD8N65M5
Manufacturer:
STMicroelectronics
Quantity:
2 000
STD/F/I/P/U8N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(off)
t
c(off)
RRM
RRM
I
Q
Q
t
r(V)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Turn-off delay time
Rise time
Cross time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16531 Rev 2
V
R
(see
(see
I
I
V
(see
I
V
(see
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 7 A, V
= 7 A, di/dt = 100 A/µs
= 7 A, di/dt = 100 A/µs
= 400 V, I
= 100 V
= 100 V, T
Figure
Figure
Figure
Figure
Test conditions
Test conditions
GS
20)
23)
20)
20)
D
GS
j
= 0
= 4A,
= 150 °C
= 10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
268
103
750
50
14
20
11
35
16
15
Max. Unit
Max. Unit
1.5
28
7
-
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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