STD18N55M5 STMicroelectronics, STD18N55M5 Datasheet - Page 5
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STD18N55M5
Manufacturer Part Number
STD18N55M5
Description
MOSFET N-CH 600V 14A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD18N55M5.pdf
(22 pages)
Specifications of STD18N55M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
497-10955-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD18N55M5
Manufacturer:
LITTLEFUSE
Quantity:
24 000
Part Number:
STD18N55M5
Manufacturer:
ST
Quantity:
20 000
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
SD
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
t
rr
rr
c
r
f
rr
rr
(2)
(1)
Turn-off delay time
Rise time
Cross time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17078 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 13 A, V
= 13 A, di/dt = 100 A/µs
= 13 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
20)
18,
GS
D
GS
j
Figure
= 150 °C
= 9 A,
= 0
= 10 V
Figure
23)
20)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
23.5
Typ.
238
278
2.8
3.3
9.5
24
29
23
13
Max. Unit
Max
1.5
13
52
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/22
A
A
V
A
A