STP8NM50N STMicroelectronics, STP8NM50N Datasheet - Page 4
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STP8NM50N
Manufacturer Part Number
STP8NM50N
Description
MOSFET N-CH 500V 5A TO-220AB
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD8NM50N.pdf
(17 pages)
Specifications of STP8NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
790 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 50V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10965-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP8NM50N
Manufacturer:
OSRAM
Quantity:
4 892
Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
Table 7.
C
Symbol
V
Symbol
Symbol
C
R
V
oss(eq)
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
DS(on)
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
t
t
oss
r
f
iss
rss
gs
gd
G
g
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 17413 Rev 2
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 50 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 400 V, I
Figure
V
R
(see
DD
G
Test conditions
Test conditions
GS
= 4.7 Ω, V
= 250 V, I
Figure
, I
Test conditions
18)
GS
D
D
D
= 250 µA
= 2.5 A
= 0
= 5 A,
17)
GS
D
GS
C
=125 °C
= 0
= 5 A,
= 10 V
Min.
Min.
500
2
-
-
-
-
Min.
-
147.5
Typ.
Typ.
0.73
364
1.2
5.4
33
14
3
3
7
Typ.
4.4
8.8
25
7
oss
Max.
Max.
when V
0.79
100
100
Max
1
4
-
-
-
-
-
DS
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
V
V
Ω
Ω
ns
ns
ns
ns