STP9NM60N STMicroelectronics, STP9NM60N Datasheet - Page 6

• Manufacturer Part Number: STP9NM60N
• Description: MOSFET N-CH 600V 6.5A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP9NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 452pF @ 50V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10966-5

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for DPAK
Safe operating area for TO-220FP
1
1
1
10
10
10
Tc=25°C
Tc=25°C
Tj=150°C
Single pulse
Tj=150°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 18063 Rev 1
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM08162v1
AM08163v1
AM08164v1
Figure 3.
Figure 5.
Figure 7.
STD9NM60N, STF9NM60N, STP9NM60N
Thermal impedance for TO-220
Thermal impedance for DPAK
Thermal impedance for TO-220FP