STL21N65M5 STMicroelectronics, STL21N65M5 Datasheet - Page 6

• Manufacturer Part Number: STL21N65M5
• Description: MOSFET N-CH 650V 17A POWERFLAT88
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10961-2

Electrical characteristics
2.1
6/14
Figure 2.
Figure 4.
Figure 6.
0.1
(A)
10
I
D
1
V
(V)
0.1
(A)
35
20
15
10
30
25
I
GS
12
10
D
0
5
0
2
8
6
4
0
0
V
Electrical characteristics (curves)
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
DS
V
5
GS
1
=10V
20
10
V
10
15
I
DD
D
=8.5A
Single pulse
40
=520V
Tc=25°C
Tj=150°C
20
100
25
60
V
30
DS
6V
V
7V
5V
(V)
GS
Doc ID 17438 Rev 3
100µs
Q
10µs
1ms
10ms
AM07068v2
AM05493v1
V
AM05496v1
g
DS
400
320
(nC)
480
80
0
240
160
(V)
Figure 3.
Figure 5.
10
R
10
10
DS(on)
K
0.16
0.10
-2
0.17
0.14
0.12
0.11
-1
0.15
0.13
(A)
(Ω)
20
10
25
I
30
15
35
-5
D
0
5
δ=0.5
Single pulse
0.2
0.1
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
10
2
V
0.01
-4
GS
4
= 10 V
4
6
0.02
10
V
0.05
DS
-3
8
=15V
6
Zth PowerFLAT 8x8 HV
10 12
10
8
-2
14
STL21N65M5
10
t
p
16
V
(s)
GS
AM05494v1
AM05495v1
(V)
I
D
(A)