STP23NM50N STMicroelectronics, STP23NM50N Datasheet - Page 16

• Manufacturer Part Number: STP23NM50N
• Description: MOSFET N-CH 500V 17A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP23NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.162 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10883-5

Revision history
6
16/17
Revision history
Table 10.
26-May-2010
11-Dec-2009
16-Sep-2010
Date
Document revision history
Revision
1
2
3
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Doc ID 16913 Rev 3
First release.
Document status promoted from preliminary data to datasheet.
Added new value in
Figure
Changes
14,
Figure 15
and
Figure
16.