STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 17

• Manufacturer Part Number: STW16N65M5
• Description: MOSFET N-CH 650V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10973-5

STF/I/P/U/W16N65M5
Table 12.
DIM.
A1
B5
V1
b2
b4
e1
L1
L2
c2
D
H
A
E
b
c
e
L
IPAK (TO-251) mechanical data
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
Doc ID 15210 Rev 3
16.10
mm.
2.28
0.80
10
typ
0.3
o
Package mechanical data
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
1.00
17/20