IXTT16N20D2 IXYS, IXTT16N20D2 Datasheet - Page 3
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IXTT16N20D2
Manufacturer Part Number
IXTT16N20D2
Description
MOSFET N-CH 200V 16A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH16N20D2.pdf
(5 pages)
Specifications of IXTT16N20D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
73 mOhm @ 8A, 0V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
16A
Gate Charge (qg) @ Vgs
208nC @ 5V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
695W
Mounting Type
Surface Mount
Package / Case
TO-268
Vds, Max, (v)
200
Id(on), Min, (a)
16
Rds(on), Max, (?)
0.073
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
5500
Crss, Typ, (pf)
607
Qg, Typ, (nc)
208
Pd, (w)
695
Rthjc, Max, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
© 2010 IXYS CORPORATION, All Rights Reserved
16
14
12
10
16
14
12
10
40
36
32
28
24
20
16
12
8
4
0
8
6
4
2
0
8
6
4
2
0
0
0
0
0.1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.2
10
Fig. 5. Drain Current @ T
0.2
0.4
20
V
0.3
DS
V
V
V
V
V
DS
DS
GS
- Volts
GS
GS
- 0.4V
- 0.8V
0.6
- 2.0V
- 2.4V
- 1.2V
- 1.6V
- Volts
- Volts
= 5V
= 0V
= 5V
3V
2V
1V
2V
4V
3V
4V
0.4
30
-1V
-2V
-3V
0V
0.8
J
= 100ºC
0.5
J
J
- 3V
= 125ºC
= 25ºC
-1V
-2V
1V
0V
40
1
0.6
0.7
1.2
50
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
200
180
160
140
120
100
80
60
40
20
36
32
28
24
20
16
12
0
8
4
0
0
-5
0
Fig. 2. Extended Output Characteristics @ T
T
J
Fig. 6. Dynamic Resistance vs. Gate Voltage
= 100ºC
5
10
-4
Fig. 4. Drain Current @ T
10
T
J
= 25ºC
20
-3
V
DS
15
V
V
V
GS
V
DS
GS
- Volts
GS
= 5V
- 0.4V
- 0.8V
- 1.2V
- 1.6V
- 2.0V
- 2.4V
- Volts
- Volts
= 0V
1.5V
20
30
-2
1V
IXTH16N20D2
IXTT16N20D2
J
2V
= 25ºC
25
∆
V
DS
1V
40
-1
= 50V - 25V
J
= 25ºC
0V
30
- 1V
-2V
50
35
0