BF861B,235 NXP Semiconductors, BF861B,235 Datasheet - Page 6

• Manufacturer Part Number: BF861B,235
• Description: JFET N-CH 25V 15MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF861B,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel JFET
• Voltage - Rated: 25V
• Current Rating: 15mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Cutoff Voltage: - 1.5 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 15 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
9397 750 13395
Product data sheet
Fig 6. Typical input characteristics; BF861A.
Fig 8. Typical input characteristics; BF861B.
(mA)
(mA)
I
I
D
D
10
5
4
3
2
1
0
8
6
4
2
0
V
V
DS
DS
1
1
= 8 V.
= 8 V.
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
V
V
GS
GS
mbd465
mbd467
(V)
(V)
Rev. 04 — 24 September 2004
0
0
BF861A; BF861B; BF861C
Fig 7. Typical output characteristics: BF861A.
Fig 9. Typical output characteristics; BF861B.
(mA)
(mA)
(1) V
(2) V
(3) V
(4) V
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
I
I
D
D
10
5
4
3
2
1
0
8
6
4
2
0
V
V
0
0
DS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
= 8 V.
= 8 V.
= 0 V.
= 100 mV.
= 200 mV.
= 300 mV.
= 0 V.
= 100 mV.
= 200 mV.
= 300 mV.
= 400 mV.
= 500 mV.
2
2
4
4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
6
6
8
8
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
V
V
DS
DS
mbd466
mbd468
(V)
(V)
10
10
6 of 13