BF1202,215 NXP Semiconductors, BF1202,215 Datasheet - Page 10
![MOSFET 2N-CH 10V 30MA SOT143R](/photos/16/4/160413/sot143_sml.jpg)
BF1202,215
Manufacturer Part Number
BF1202,215
Description
MOSFET 2N-CH 10V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1202WR115.pdf
(15 pages)
Specifications of BF1202,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Current Rating
30mA
Frequency
400MHz
Gain
30.5dB
Transistor Type
N-Channel Dual Gate
Noise Figure
0.9dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
10V
Power Gain (typ)@vds
34.5@5VdB
Noise Figure (max)
11dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
1.7@5V@Gate 1/1@5V@Gate 2pF
Output Capacitance (typ)@vds
0.85@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
PACKAGE OUTLINES
2010 Sep 16
Plastic surface-mounted package; 4 leads
N-channel dual-gate PoLo MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
10
1
B
1.7
e 1
v
M
H E
2.5
2.1
BF1202; BF1202R; BF1202WR
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X