BSS83,235 NXP Semiconductors, BSS83,235 Datasheet - Page 2

• Manufacturer Part Number: BSS83,235
• Description: MOSFET N-CH 10V 50MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BSS83,235

• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -

NXP Semiconductors
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
APPLICATIONS
PINNING
Note
1. Drain and source are
QUICK REFERENCE DATA
1
2
3
4
Drain-source voltage
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
Total power dissipation up to T
Gate-source threshold voltage
Drain-source ON-resistance
Feed-back capacitance
analog and/or digital switch
switch driver
MOSFET N-channel enhancement switching transistor
V
I
V
V
V
D
interchangeable.
= substrate (b)
= source
= drain
= gate
DS
GS
GS
DS
= 1 A
= V
= 10 V; f = 1 MHz
= 10 V; V
= V
GS
BS
; V
= 15 V;
SB
SB
= 0;
= 0; I
D
= 0.1 mA
amb
= 25 C
Marking code:
BSS83 = % M9
Rev. 03 - 21 November 2007
handbook, halfpage
Top view
4
1
Fig.1 Simplified outline and symbol.
3
2
V
V
V
V
I
P
V
R
C
D
DS
SD
DB
SB
tot
GS(th)
DSon
rss
MAM389
g
max.
max.
max.
max.
max.
max.
typ.
Product specification
s
d
b
230 mW
0.1 V
2.0 V
0.6 pF
10 V
10 V
15 V
15 V
50 mA
45
BSS83
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