ATMEGA128A-ANR Atmel, ATMEGA128A-ANR Datasheet - Page 297
ATMEGA128A-ANR
Manufacturer Part Number
ATMEGA128A-ANR
Description
IC MCU AVR 128K FLASH 64TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA128A-ANR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
53
Program Memory Size
128KB (64K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP
Core
AVR8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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26.6.2
26.6.3
26.6.4
8151H–AVR–02/11
Considerations for Efficient Programming
Chip Erase
Programming the Flash
Note, if External Crystal or External RC configuration is selected, it may not be possible to apply
qualified XTAL1 pulses. In such cases, the following algorithm should be followed:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
are not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set Prog_enable pins listed in
2. Apply 4.5V - 5.5V between V
3. Wait 100 µs.
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0b0.
6. Entering Programming mode with the original algorithm, as described above.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value $FF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
locations.
EESAVE fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256-byte EEPROM. This consideration also applies to Signature bytes
reading.
RESET.
(CKSEL3:0 = 0b0000) If Lock bits are programmed, a Chip Erase command must be
executed before changing the fuses.
The EEPRPOM memory is preserved during chip erase if the EESAVE fuse is programmed.
CC
Table on page 295
and GND simultaneously as 11.5V - 12.5V is applied to
Table 26-10 on page
(Note:)
to “0000”.
memories plus Lock bits. The Lock bits
296. When programming the Flash,
ATmega128A
297
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