PK30X256VMD100 Freescale Semiconductor, PK30X256VMD100 Datasheet - Page 32

• Manufacturer Part Number: PK30X256VMD100
• Description: IC ARM CORTEX MCU 256K 144-MAP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK30X256VMD100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SDHC, SPI, UART/USART
• Peripherals: DMA, I²S, LCD, LVD, POR, PWM, WDT
• Number Of I /o: 102
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 37x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LBGA
• Rohs Compliant: Yes
• Processor Series: Kinetis
• Core: ARM Cortex M4
• Data Ram Size: 64 KB
• Interface Type: UART, SPI, I2C, I2S, CAN
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 102
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Peripheral operating requirements and behaviors
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
32
n
n
n
t
n
n
t
t
t
t
t
nvmretee100
t
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
nvmwree32k
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmretee1
nvmwree4k
nvmcycp
nvmcycd
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
I
Symbol
DD_PGM
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Worst case programming current in program flash
Description
Table 20. Flash (FTFL) current and power specfications
K30 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
javg
Table 21. NVM reliability specifications
= 55°C (temperature profile over the lifetime of the application).
FlexRAM as EEPROM
Program Flash
Preliminary
Data Flash
1.27 M
315 K
10 M
80 M
10 K
10 K
35 K
Min.
10
15
10
15
10
15
5
5
5
Typ.
j
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
≤ 125°C.
1
Max.
Typ.
10
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—
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—
—
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Freescale Semiconductor, Inc.
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
years
years
years
Unit
Unit
mA
Notes
2
2
2
3
2
2
2
3
2
2
2
4