PUMH4,115 NXP Semiconductors, PUMH4,115 Datasheet - Page 4

• Manufacturer Part Number: PUMH4,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMH4,115

• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): -
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934054931115 PUMH4 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2004 Apr 14
Per transistor
R
Per device
R
Per transistor
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
th(j-a)
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
V
C
CB
CE
CE
EB
CE
CB
= 10 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
4
CONDITIONS
C
C
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
E
B
B
B
E
amb
amb
= 0
= 1 mA
= 0
= 0
= 0; T
= 0.5 mA
= i
CONDITIONS
≤ 25 °C
≤ 25 °C
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
−
200
−
7
−
MIN.
VALUE
PEMH4; PUMH4
625
625
416
416
−
−
−
−
−
−
10
−
TYP.
Product data sheet
100
1
50
100
−
150
13
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
kΩ
pF
UNIT