PUMB11,115 NXP Semiconductors, PUMB11,115 Datasheet - Page 2

• Manufacturer Part Number: PUMB11,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMB11,115

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056289115 PUMB11 T/R

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral drivers
• Replacement of general purpose transistors in digital
• Control of IC inputs.
DESCRIPTION
PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2003 Oct 03
PEMB11
PUMB11
PEMB11
PUMB11
TYPE NUMBER
TYPE NUMBER
applications
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT363
Top view
PACKAGE
6
1
SIMPLIFIED OUTLINE AND SYMBOL
5
2
SC-88
EIAJ
−
3
4
MAM477
MARKING CODE
2
TR1
QUICK REFERENCE DATA
V
I
TR1
TR2
R1
R2
SYMBOL
O
6
1
CEO
B*1
B1
R1
R2
5
2
R2
R1
collector-emitter
voltage
output current (DC)
PNP
PNP
bias resistor
bias resistor
(1)
PARAMETER
4
3
TR2
COMPLEMENT
NPN/PNP
PEMD3
PUMD3
PEMB11; PUMB11
PIN
1
2
3
4
5
6
−
−
−
−
10
10
TYP.
Product data sheet
PINNING
COMPLEMENT
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
DESCRIPTION
NPN/NPN
−50
−100
−
−
−
−
MAX.
PEMH11
PUMH11
V
mA
−
−
kΩ
kΩ
UNIT