DN2535N5-G Supertex, DN2535N5-G Datasheet

MOSFET Power 350V 25Ohm

DN2535N5-G

Manufacturer Part Number
DN2535N5-G
Description
MOSFET Power 350V 25Ohm
Manufacturer
Supertex
Datasheet

Specifications of DN2535N5-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 Ohms
Drain-source Breakdown Voltage
350 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
500 mA
Power Dissipation
15 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DN2535N5-G
Manufacturer:
ST
Quantity:
10 000
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Supertex inc.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Distance of 1.6mm from case for 10 seconds.
DN2540
Device
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Supertex inc.
DN2540N3-G
TO-92
DN2540N5-G
1235 Bordeaux Drive, Sunnyvale, CA 94089
Package Options
TO-220
N-Channel Depletion-Mode
Vertical DMOS FETs
-55
O
C to +150
300
Value
BV
BV
±20V
TO-243AA (SOT-89)
DGX
DSX
O
O
C
C
DN2540N8-G
General Description
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Pin Configurations
SOURCE
TO-92 (N3)
Tel: 408-222-8888
DRAIN
TO-243AA (SOT-89) (N8)
DRAIN
BV
GATE
GATE
DSX
400
(V)
/BV
DRAIN
DGX
DRAIN
SOURCE
www.supertex.com
R
TO-220 (N5)
(max)
GATE
DS(ON)
(Ω)
25
DN2540
DRAIN
(min)
(mA)
SOURCE
150
I
DSS

Related parts for DN2535N5-G

DN2535N5-G Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... DS(ON) DS(ON) G Forward transconductance FS C Input capacitance ISS C Common source output capacitance OSS C Reverse transfer capacitance RSS Supertex inc. Package may or may not include the following marks Code for week sealed DN5DW = “Green” Packaging TO-243AA (SOT-89) (N8) I Power Dissipation D (pulsed ...

Page 3

... Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT 10% -10V t (ON d(ON) r VDD 10% OUTPUT 0V 90% Supertex inc. (cont.) Min Typ - - - - - - - - - - - 800 C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) O 90% t (OFF) ...

Page 4

... V = 10V DS 0.4 0.3 0.2 0 100 I (Milliamps) D Maximum Rated Safe Operating Area 1 TO-92/TO-220 (pulsed TO-243AA (DC) 0.1 TO-92 (DC) 0. 0.001 (Volts) DS Supertex inc. 250 V = 1.0V GS 0.5V 200 0V 150 100 -0.5V -1.0V 240 320 400 125 150 200 250 1.0 TO-220 (DC) 0.8 0.6 0.4 ...

Page 5

... Transfer Characteristics 0. 10V DS 0.32 0.24 0.16 0. (Volts) GS Capacitance Vs. Drain-to-Source Voltage 200 C ISS 150 100 C OSS 50 C RSS (Volts) DS Supertex inc. (cont.) 150 100 125 10V ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 5 On-Resistance vs. Drain Current 100 160 240 320 ...

Page 6

... Bottom View Symbol A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Supertex inc Front View ...

Page 7

... MAX .190 .055 .120 † JEDEC Registration TO-220, Variation AB, Issue K, April 2002. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO220N5, Version C041009. Supertex inc. A Φ Side View ...

Page 8

... JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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