DN2535N5-G Supertex, DN2535N5-G Datasheet - Page 5

• Manufacturer Part Number: DN2535N5-G
• Description: MOSFET Power 350V 25Ohm
• Manufacturer: Supertex

Specifications of DN2535N5-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 Ohms
• Drain-source Breakdown Voltage: 350 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 500 mA
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
0.40
0.32
0.24
0.16
0.08
1.05
0.95
200
150
100
Supertex inc.
1.1
1.0
0.9
50
0
0
-3
0
-50
Capacitance Vs. Drain-to-Source Voltage
V
C
V
C
BV
DS
C
RSS
GS
ISS
OSS
= 10V
= -5.0V
DSS
-2
10
Transfer Characteristics
Variation with Temperature
0
-1
V
V
GS
DS
T
j
(Volts)
20
(Volts)
(
50
O
C)
T
●
0
A
= -55
1235 Bordeaux Drive, Sunnyvale, CA 94089
O
100
C
T
30
T
A
A
= 25
V
= 125
1
(cont.)
GS
= 10V
O
C
O
C
150
2
40
5
100
2.5
1.5
0.5
80
60
40
20
15
10
-5
V
0
5
0
2
1
0
-50
GS(OFF)
0
0
●
V
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
GS
and R
170pF
= 0V
80
0.4
0
Q
DS(ON)
C
(Nanocoulombs)
I
160
R
D
0.8
DS(ON)
Variation with Temperature
(milliamps)
T
200pF
j
(
50
@ I
O
C)
●
240
D
1.2
www.supertex.com
= 120mA
V
V
DS
V
GS(OFF)
DS
100
= 20V
320
= 40V
1.6
@ 10µA
150
400
2.0
DN2540